Effect of low dose electron irradiation on AlGaAs/GaAs at low temperaturesZARDAS, G. E; HATZOPOULOS, Z; YANNAKOPOULOS, P. H et al.Physica status solidi. A. Applied research. 1989, Vol 114, Num 1, pp K41-K43, issn 0031-8965Article

On the case of the negative activation volumes of defects in solidsZARDAS, G. E; SYMEONIDES, Ch. I.Physica. B, Condensed matter. 2009, Vol 404, Num 8-11, pp 1394-1397, issn 0921-4526, 4 p.Article

Dependence of GaAs:Si persistent photoconductivity on temperature and α-particle irradiationZARDAS, G. E; YANNAKOPOULOS, P. H; ZISKA, M et al.Microelectronics journal. 2005, Vol 36, Num 1, pp 1-4, issn 0959-8324, 4 p.Article

A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under α-particle irradiationZARDAS, G. E; YANNAKOPOULOS, P. H; SYMEONIDES, Chrys I et al.Microelectronics journal. 2008, Vol 39, Num 5, pp 737-739, issn 0959-8324, 3 p.Article

Effect of α-particle irradiation on AlGaAs/GaAs planar photoconductive detectors at low temperaturesZARDAS, G. E; EUTHYMIOU, P. C; SYMEONIDES, C et al.Physica status solidi. A. Applied research. 1992, Vol 133, Num 1, pp K49-K52, issn 0031-8965Article

Electron irradiation induced defects in undoped and Te doped gallium phosphideZARDAS, G. E; SYMEONIDES, Ch. I; EUTHYMIOU, P. C et al.Solid state communications. 2008, Vol 145, Num 7-8, pp 332-336, issn 0038-1098, 5 p.Article

Room temperature persistent photoconductivity in GaP:SZARDAS, G. E; THEODOROU, D. E; EUTHYMIOU, P. C et al.Solid state communications. 1998, Vol 105, Num 2, pp 77-79, issn 0038-1098Article

DLTS studies of defects in GaP : Te before and after electron irradiationBANBURY, P. C; EUTHYMIOU, P. C; KOURKOUTAS, C. D et al.Solid state communications. 1990, Vol 74, Num 4, pp 305-308, issn 0038-1098, 4 p.Article

Temperature dependence of Si-GaAs energy gap using photoconductivity spectraZARDAS, G. E; YANNAKOPOULOS, P. H; ZISKA, M et al.Microelectronics journal. 2006, Vol 37, Num 2, pp 91-93, issn 0959-8324, 3 p.Article

Effect of α-particle irradiation on GaAs planar photoconductive detectors at low temperaturesEUTHYMIOU, P. C; ZARDAS, G. E; SYMEONIDIS, C et al.Physica status solidi. A. Applied research. 1993, Vol 139, Num 2, pp K113-K116, issn 0031-8965Article

The effect of electron irradiation dose on the profile of electric characteristics of Gaas VPE layersKOURKOUTAS, C. D; KOVACS, B; EUTHYMIOU, P. C et al.Physica status solidi. A. Applied research. 1993, Vol 135, Num 1, pp K21-K24, issn 0031-8965Article